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FETs, MOSFETs

Hersteller	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	FET-Typ	Technologie	Strom - Dauer-Drain (Id) @ 25 °C	Antriebsspannung (Max Rds Ein, Min Rds Ein)	Rds Ein (Max) @ Id, Vgs	Montageart	Vgs(th) (Max) @ Id	Gate-Ladung (Qg) (Max) @ Vgs	Drain-Source-Spannung (Vdss)	Vgs (Max)	Eingangskapazität (Ciss) (Max) @ Vds	Qualifizierung	FET-Funktion	Lieferant Gerätepaket	Klasse	Leistungsverlust (Max)	Betriebstemperatur
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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Hersteller-Teil #	Verfügbarkeit	Preis	Menge	Datenblatt	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	FET-Typ	Technologie	Strom - Dauer-Drain (Id) @ 25 °C	Antriebsspannung (Max Rds Ein, Min Rds Ein)	Rds Ein (Max) @ Id, Vgs	Montageart	Vgs(th) (Max) @ Id	Gate-Ladung (Qg) (Max) @ Vgs	Drain-Source-Spannung (Vdss)	Vgs (Max)	Eingangskapazität (Ciss) (Max) @ Vds	Qualifizierung	FET-Funktion	Lieferant Gerätepaket	Klasse	Leistungsverlust (Max)	Betriebstemperatur
TK65S04N1L,LQ MOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage	3,964	-	RFQ	Datenblatt	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Ta)	10V	4.3mOhm @ 32.5A, 10V	Surface Mount	2.5V @ 300µA	39 nC @ 10 V	40 V	±20V	2550 pF @ 10 V	-	-	DPAK+	-	107W (Tc)	175°C (TJ)
IPD038N06N3GATMA1 MOSFET N-CH 60V 90A TO252-3 Infineon Technologies	2,376	-	RFQ	Datenblatt	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	3.8mOhm @ 90A, 10V	Surface Mount	4V @ 90µA	98 nC @ 10 V	60 V	±20V	8000 pF @ 30 V	-	-	PG-TO252-3	-	188W (Tc)	-55°C ~ 175°C (TJ)
IPA60R380E6XKSA1 MOSFET N-CH 600V 10.6A TO220-FP Infineon Technologies	150	-	RFQ	Datenblatt	CoolMOS™	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	10V	380mOhm @ 3.8A, 10V	Through Hole	3.5V @ 320µA	32 nC @ 10 V	600 V	±20V	700 pF @ 100 V	-	-	PG-TO220-FP	-	31W (Tc)	-55°C ~ 150°C (TJ)
RD3G600GNTL MOSFET N-CH 40V 60A TO252 Rohm Semiconductor	2,427	-	RFQ	Datenblatt	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	3.6mOhm @ 60A, 10V	Surface Mount	2.5V @ 1mA	46.5 nC @ 10 V	40 V	±20V	3400 pF @ 20 V	-	-	TO-252	-	40W (Tc)	150°C (TJ)
PJMF280N65E1_T0_00001 650V SUPER JUNCITON MOSFET Panjit International Inc.	1,998	-	RFQ	Datenblatt	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.8A (Tc)	10V	280mOhm @ 4.4A, 10V	Through Hole	4V @ 250µA	30 nC @ 10 V	650 V	±30V	1040 pF @ 400 V	-	-	ITO-220AB-F	-	35.7W (Tc)	-55°C ~ 150°C (TJ)
STB120N4F6 MOSFET N-CH 40V 80A D2PAK STMicroelectronics	744	-	RFQ	Datenblatt	DeepGATE™, STripFET™ VI	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	4mOhm @ 40A, 10V	Surface Mount	4V @ 250µA	65 nC @ 10 V	40 V	±20V	3850 pF @ 25 V	AEC-Q101	-	TO-263 (D2PAK)	Automotive	110W (Tc)	-55°C ~ 175°C (TJ)
IRF9Z30PBF-BE3 MOSFET P-CH 50V 18A TO220AB Vishay Siliconix	8,011	-	RFQ	Datenblatt	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	140mOhm @ 9.3A, 10V	Through Hole	4V @ 250µA	39 nC @ 10 V	50 V	±20V	900 pF @ 25 V	-	-	TO-220AB	-	74W (Tc)	-55°C ~ 150°C (TJ)
SIRA54ADP-T1-RE3 N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix	6,000	-	RFQ	Datenblatt	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	36.2A (Ta), 128A (Tc)	4.5V, 10V	2.2mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	70 nC @ 10 V	40 V	+20V, -16V	3850 pF @ 20 V	-	-	PowerPAK® SO-8	-	5.2W (Ta), 65.7W (Tc)	-55°C ~ 150°C (TJ)
SIJA54ADP-T1-GE3 N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix	5,923	-	RFQ	Datenblatt	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35.4A (Ta), 126A (Tc)	4.5V, 10V	2.3mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	70 nC @ 10 V	40 V	+20V, -16V	3850 pF @ 20 V	-	-	PowerPAK® SO-8	-	5.2W (Ta), 65.7W (Tc)	-55°C ~ 150°C (TJ)
PSMN1R0-25YLDX MOSFET N-CH 25V 100A LFPAK56 Nexperia USA Inc.	5,901	-	RFQ	Datenblatt	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	0.89mOhm @ 25A, 10V	Surface Mount	2.2V @ 1mA	71.8 nC @ 10 V	25 V	±20V	5308 pF @ 12 V	-	Schottky Diode (Body)	LFPAK56, Power-SO8	-	160W (Tc)	-55°C ~ 175°C (TJ)
IRF9Z24PBF-BE3 MOSFET P-CH 60V 11A TO220AB Vishay Siliconix	891	-	RFQ	Datenblatt	-	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	-	280mOhm @ 6.6A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	60 V	±20V	570 pF @ 25 V	-	-	TO-220AB	-	60W (Tc)	-55°C ~ 175°C (TJ)
DMG4406LSS-13 MOSFET N CH 30V 10.3A 8-SO Diodes Incorporated	2,334	-	RFQ	Datenblatt	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.3A (Ta)	4.5V, 10V	11mOhm @ 12A, 10V	Surface Mount	2V @ 250µA	26.7 nC @ 10 V	30 V	±20V	1281 pF @ 15 V	-	-	8-SO	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
AON7436 MOSFET N-CH 20V 9A/23A 8DFN Alpha & Omega Semiconductor Inc.	9,865	-	RFQ	Datenblatt	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Ta), 23A (Tc)	1.8V, 10V	19mOhm @ 9A, 10V	Surface Mount	1.1V @ 250µA	15 nC @ 10 V	20 V	±12V	630 pF @ 10 V	-	-	8-DFN-EP (3x3)	-	3.1W (Ta), 16.7W (Tc)	-55°C ~ 150°C (TJ)
SI1011X-T1-GE3 MOSFET P-CH 12V SC89-3 Vishay Siliconix	8,324	-	RFQ	Datenblatt	TrenchFET®	SC-89, SOT-490	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	480mA (Ta)	1.2V, 4.5V	640mOhm @ 400mA, 4.5V	Surface Mount	800mV @ 250µA	4 nC @ 4.5 V	12 V	±5V	62 pF @ 6 V	-	-	SC-89-3	-	190mW (Ta)	-55°C ~ 150°C (TJ)
PMF250XN,115 MOSFET N-CH 30V 900MA SOT323-3 NXP USA Inc.	2,027	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	900mA (Ta)	2.5V, 4.5V	300mOhm @ 900mA, 4.5V	Surface Mount	1.5V @ 250µA	1.1 nC @ 4.5 V	30 V	±12V	50 pF @ 15 V	-	-	SC-70	-	275mW (Ta), 1.065W (Tc)	-55°C ~ 150°C (TJ)
SSM3K301T(TE85L,F) MOSFET N-CH 20V 3.5A TSM Toshiba Semiconductor and Storage	7,160	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	1.8V, 4V	56mOhm @ 2A, 4V	Surface Mount	-	4.8 nC @ 4 V	20 V	±12V	320 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K302T(TE85L,F) MOSFET N-CH 30V 3A TSM Toshiba Semiconductor and Storage	3,723	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	1.8V, 4V	71mOhm @ 2A, 4V	Surface Mount	-	4.3 nC @ 4 V	30 V	±12V	270 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K309T(TE85L,F) MOSFET N-CH 20V 4.7A TSM Toshiba Semiconductor and Storage	3,135	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.7A (Ta)	1.8V, 4V	31mOhm @ 4A, 4V	Surface Mount	-	-	20 V	±12V	1020 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K310T(TE85L,F) MOSFET N-CH 20V 5A TSM Toshiba Semiconductor and Storage	2,507	-	RFQ	Datenblatt	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	1.5V, 4V	28mOhm @ 4A, 4V	Surface Mount	-	14.8 nC @ 4 V	20 V	±10V	1120 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SI1489EDH-T1-GE3 MOSFET P-CH 8V 2A SOT-363 Vishay Siliconix	9,128	-	RFQ	Datenblatt	TrenchFET®	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2A (Tc)	1.2V, 4.5V	48mOhm @ 3A, 4.5V	Surface Mount	700mV @ 250µA	16 nC @ 4.5 V	8 V	±5V	-	-	-	SC-70-6	-	2.8W (Tc)	-55°C ~ 150°C (TJ)

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