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Einzeldioden

Hersteller	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	Technologie	Spannung - Gleichstromsperrspannung (Vr) (Max)	Spannung - Vorwärtsspannung (Vf) (Max) @ If	Geschwindigkeit	Sperrerholungszeit (trr)	Strom - Sperrleck @ Vr	Kapazität @ Vr, F	Strom - Durchschnittlich gleichgerichtet (Io)	Klasse	Qualifizierung	Montageart	Lieferant Gerätepaket	Betriebstemperatur - Sperrschicht
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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Hersteller-Teil #	Verfügbarkeit	Preis	Menge	Datenblatt	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	Technologie	Spannung - Gleichstromsperrspannung (Vr) (Max)	Spannung - Vorwärtsspannung (Vf) (Max) @ If	Geschwindigkeit	Sperrerholungszeit (trr)	Strom - Sperrleck @ Vr	Kapazität @ Vr, F	Strom - Durchschnittlich gleichgerichtet (Io)	Klasse	Qualifizierung	Montageart	Lieferant Gerätepaket	Betriebstemperatur - Sperrschicht
BAT54SW-QF BAT54SW-Q/SOT323/SC-70 Nexperia USA Inc.	8,670	-	RFQ	Datenblatt	-	SC-70, SOT-323	Tape & Reel (TR)	Active	Schottky	30 V	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	200mA	Automotive	AEC-Q101	Surface Mount	SOT-323	150°C
RB520CS3002LYL DIODE SCHOTT 30V 200MA DFN1006-2 Nexperia USA Inc.	7,993	-	RFQ	Datenblatt	-	SOD-882	Tape & Reel (TR)	Active	Schottky	30 V	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 10 V	-	200mA	Automotive	AEC-Q101	Surface Mount	DFN1006-2	150°C (Max)
1N4148WT,H3F(B 100 V/0.25 A SWITCHING DIODE, SO Toshiba Semiconductor and Storage	7,845	-	RFQ	Datenblatt	-	SC-79, SOD-523	Tape & Reel (TR)	Active	Standard	100 V	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	200 nA @ 80 V	0.5pF @ 0V, 1MHz	250mA	-	-	Surface Mount	ESC	150°C
RB751M5-40 RSG 0.03A, 40V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation	7,780	-	RFQ	Datenblatt	-	SC-79, SOD-523	Tape & Reel (TR)	Active	Schottky	30 V	370 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 30 V	2pF @ 1V, 1MHz	30mA	-	-	Surface Mount	SOD-523F	-55°C ~ 125°C
SK18 DIODE SCHOTTKY 80V 1A SMA Diotec Semiconductor	7,500	-	RFQ	Datenblatt	-	DO-214AC, SMA	Bulk	Active	Schottky	80 V	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 80 V	-	1A	-	-	Surface Mount	DO-214AC (SMA)	-50°C ~ 150°C
MBR1020LL_R1_00001 SOD-123FL, SKY Panjit International Inc.	7,369	-	RFQ	Datenblatt	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	20 V	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	25 mA @ 20 V	-	1A	-	-	Surface Mount	SOD-123FL	-55°C ~ 125°C
MBRB1635 DIODE SCHOTTKY 35V 16A D2PAK SMC Diode Solutions	4,923	-	RFQ	Datenblatt	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	35 V	630 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 35 V	1400pF @ 5V, 1MHz	16A	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
MBRB1645 DIODE SCHOTTKY 45V 16A D2PAK SMC Diode Solutions	9,823	-	RFQ	Datenblatt	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	630 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	1400pF @ 5V, 1MHz	16A	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
MBRB1660 DIODE SCHOTTKY 60V 16A D2PAK SMC Diode Solutions	8,345	-	RFQ	Datenblatt	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	60 V	750 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	16A	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
WND10M600XQ WND10M600X/TO-220F/STANDARD MARK WeEn Semiconductors	2,256	-	RFQ	Datenblatt	-	TO-220-2 Full Pack, Isolated Tab	Bulk	Active	Standard	600 V	980 mV @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	10A	-	-	Through Hole	TO-220F	150°C
MBR1040F-BP Interface Micro Commercial Co	8,247	-	RFQ	Datenblatt	-	TO-220-2 Isolated Tab	Bulk	Active	Schottky	40 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	10A	-	-	Through Hole	ITO-220AC	-50°C ~ 150°C
MBR1020F-BP Interface Micro Commercial Co	8,468	-	RFQ	Datenblatt	-	TO-220-2 Isolated Tab	Bulk	Not For New Designs	Schottky	20 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	10A	-	-	Through Hole	ITO-220AC	-50°C ~ 150°C
MBR1030F-BP Interface Micro Commercial Co	7,599	-	RFQ	Datenblatt	-	TO-220-2 Isolated Tab	Bulk	Not For New Designs	Schottky	30 V	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	10A	-	-	Through Hole	ITO-220AC	-50°C ~ 150°C
STPR820D DIODE GEN PURP 200V 8A TO220AC STMicroelectronics	2,593	-	RFQ	Datenblatt	-	TO-220-2	Tube	Obsolete	Standard	200 V	1.25 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	50 µA @ 200 V	-	8A	-	-	Through Hole	TO-220AC	150°C (Max)
EG1 DIODE GEN PURP 400V 800MA AXIAL Sanken Electric USA Inc.	4,165	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	1.8 V @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 400 V	-	800mA	-	-	Through Hole	-	-40°C ~ 150°C
EG1A DIODE GEN PURP 600V 600MA AXIAL Sanken Electric USA Inc.	3,049	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	2 V @ 600 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	100 µA @ 600 V	-	600mA	-	-	Through Hole	-	-40°C ~ 150°C
EG01 DIODE GEN PURP 400V 700MA AXIAL Sanken Electric USA Inc.	8,752	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	2 V @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 400 V	-	700mA	-	-	Through Hole	-	-40°C ~ 150°C
EG01A DIODE GEN PURP 600V 500MA AXIAL Sanken Electric USA Inc.	8,612	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	2 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	100 µA @ 600 V	-	500mA	-	-	Through Hole	-	-40°C ~ 150°C
EH1 DIODE GEN PURP 400V 600MA AXIAL Sanken Electric USA Inc.	6,804	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	1.35 V @ 600 mA	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 400 V	-	600mA	-	-	Through Hole	-	-40°C ~ 150°C
EM1 DIODE GEN PURP 400V 1A AXIAL Sanken Electric USA Inc.	6,184	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C

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