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Einzeldioden

Hersteller	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	Technologie	Spannung - Gleichstromsperrspannung (Vr) (Max)	Spannung - Vorwärtsspannung (Vf) (Max) @ If	Geschwindigkeit	Sperrerholungszeit (trr)	Strom - Sperrleck @ Vr	Kapazität @ Vr, F	Strom - Durchschnittlich gleichgerichtet (Io)	Klasse	Qualifizierung	Montageart	Lieferant Gerätepaket	Betriebstemperatur - Sperrschicht
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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Hersteller-Teil #	Verfügbarkeit	Preis	Menge	Datenblatt	Serie	Verpackung/Gehäuse	Verpackung	Produktstatus	Technologie	Spannung - Gleichstromsperrspannung (Vr) (Max)	Spannung - Vorwärtsspannung (Vf) (Max) @ If	Geschwindigkeit	Sperrerholungszeit (trr)	Strom - Sperrleck @ Vr	Kapazität @ Vr, F	Strom - Durchschnittlich gleichgerichtet (Io)	Klasse	Qualifizierung	Montageart	Lieferant Gerätepaket	Betriebstemperatur - Sperrschicht
EM1A DIODE GEN PURP 600V 1A AXIAL Sanken Electric USA Inc.	8,508	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EM1Y DIODE GEN PURP 100V 1A AXIAL Sanken Electric USA Inc.	5,987	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	100 V	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EM01 DIODE GEN PURP 400V 1A AXIAL Sanken Electric USA Inc.	2,415	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EM01A DIODE GEN PURP 600V 1A AXIAL Sanken Electric USA Inc.	8,111	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EM01Z DIODE GEN PURP 200V 1A AXIAL Sanken Electric USA Inc.	7,313	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	200 V	970 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
ES1 DIODE GEN PURP 400V 700MA AXIAL Sanken Electric USA Inc.	2,231	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	2.5 V @ 800 mA	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 400 V	-	700mA	-	-	Through Hole	-	-40°C ~ 150°C
ES01A DIODE GEN PURP 600V 700MA AXIAL Sanken Electric USA Inc.	3,215	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	3 V @ 800 mA	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 600 V	-	700mA	-	-	Through Hole	-	-40°C ~ 150°C
EU1 DIODE GEN PURP 400V 250MA AXIAL Sanken Electric USA Inc.	7,386	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	2.5 V @ 250 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 400 V	-	250mA	-	-	Through Hole	-	-40°C ~ 150°C
EU1Z DIODE GEN PURP 200V 500MA AXIAL Sanken Electric USA Inc.	9,284	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	200 V	1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 200 V	-	500mA	-	-	Through Hole	-	-40°C ~ 150°C
EU2 DIODE GEN PURP 400V 1A AXIAL Sanken Electric USA Inc.	6,262	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 400 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EU2A DIODE GEN PURP 600V 1A AXIAL Sanken Electric USA Inc.	9,460	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 600 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EU01 DIODE GEN PURP 400V 250MA AXIAL Sanken Electric USA Inc.	2,514	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	2.5 V @ 250 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 400 V	-	250mA	-	-	Through Hole	-	-40°C ~ 150°C
EU01Z DIODE GEN PURP 200V 250MA AXIAL Sanken Electric USA Inc.	6,189	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	200 V	2.5 V @ 250 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 200 V	-	250mA	-	-	Through Hole	-	-40°C ~ 150°C
EU02 DIODE GEN PURP 400V 1A AXIAL Sanken Electric USA Inc.	5,406	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	400 V	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 400 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
EU02A DIODE GEN PURP 600V 1A AXIAL Sanken Electric USA Inc.	6,463	-	RFQ	Datenblatt	-	Axial	Bulk	Active	Standard	600 V	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 600 V	-	1A	-	-	Through Hole	-	-40°C ~ 150°C
SD103BW DIODE SCHOTTKY 30V 0.35A SOD123F Diotec Semiconductor	5,949	-	RFQ	Datenblatt	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	30 V	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 20 V	50pF @ 0V, 1MHz	350mA	-	-	Surface Mount	SOD-123F	-55°C ~ 125°C
SD103CW RHG DIODE SCHOTTKY 20V 350MA SOD123 Taiwan Semiconductor Corporation	5,800	-	RFQ	Datenblatt	-	SOD-123	Tape & Reel (TR)	Active	Schottky	20 V	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 20 V	50pF @ 0V, 1MHz	350mA	-	-	Surface Mount	SOD-123	125°C (Max)
SD103AW RHG DIODE SCHOTTKY 40V 350MA SOD123 Taiwan Semiconductor Corporation	5,580	-	RFQ	Datenblatt	-	SOD-123	Tape & Reel (TR)	Active	Schottky	40 V	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 40 V	50pF @ 0V, 1MHz	350mA	-	-	Surface Mount	SOD-123	125°C (Max)
EM513-AQ DIODE GEN PURP 1600V 1A DO204AC Diotec Semiconductor	5,000	-	RFQ	Datenblatt	-	DO-204AC, DO-41, Axial	Cut Tape (CT)	Active	Standard	1600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1600 V	-	1A	-	-	Through Hole	DO-204AC (DO-41)	-50°C ~ 175°C
SKL16 DIODE SCHOTTKY 60V 1A SOD123FL Diotec Semiconductor	4,980	-	RFQ	Datenblatt	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	60 V	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	1A	-	-	Surface Mount	SOD-123FL	-50°C ~ 150°C

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