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Stromregelung – Dioden, Transistoren

Hersteller	Serie	Verpackung	Produktstatus	Spannung - Anode - Kathode (Vak)(Max)	Reglerstrom (Max)	Leistung – Max	Anwendungen	Betriebstemperatur	Klasse	Qualifizierung	Spannung - Begrenzung (Max)	Montageart	Lieferant Gerätepaket
Central Semiconductor Corp Diotec Semiconductor Flip Electronics LEDdynamics Inc. Linear Integrated Systems, Inc. MACOM Technology Solutions Microchip Technology Microsemi Corporation Semitec USA Corp	* - DynaOhm™ E J500 S SST500	Bag Bulk Cut Tape (CT) Tape & Reel (TR)	Active Discontinued Obsolete	- 100V 190V 50V 60V 70V 80V 90V	- 1.001mA 1.1mA 1.21mA 1.32mA 1.3mA 1.43mA 1.54mA 1.65mA 1.72mA 1.76mA 1.7mA 1.98mA 10.01mA 11.1mA 12.4mA 12mA 14.4mA 17mA 18mA 1mA 2.16mA 2.2mA 2.32mA 2.3mA 2.42mA 2.64mA 2.97mA 20mA 210µA 23mA 242µA 25mA 264µA 297µA 29mA 3.1mA 3.3mA 3.63mA 3.96mA 330µA 34mA 363µA 4.1mA 4.29mA 4.73mA 400µA 420µA 429µA 44mA 46mA 473µA 5.17mA 5.1mA 5.61mA 5.6mA 516µA 517µA 6.16mA 6.5mA 6.7mA 6.82mA 600µA 60mA 616µA 630µA 672µA 682µA 7.48mA 748µA 8.25mA 825µA 9.02mA 9.84mA 9.8mA 900µA 902µA 920µA	- 1W 300mW 350mW 475mW 500mW 580mW 600mW 700mW 780mW	- Battery Charger LED Driver Silicon Field Effect	- -30°C ~ 150°C -40°C ~ 100°C -40°C ~ 150°C -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C -65°C ~ 150°C (TJ) -65°C ~ 175°C -65°C ~ 175°C (TJ) -65°C ~ 200°C (TJ)	- Automotive Military	- AEC-Q101 MIL-PRF-19500/463	- 1.05V 1.13V 1.15V 1.1V 1.25V 1.29V 1.2V 1.35V 1.3V 1.45V 1.4V 1.55V 1.5V 1.65V 1.6V 1.75V 1.7V 1.85V 1.95V 1.9V 1V 2.15V 2.25V 2.35V 2.3V 2.5V 2.6V 2.75V 2.7V 2.8V 2.9V 2V 3.1V 3.2V 3.5V 3.67V 3.7V 3.8V 3V 4.03V 4.2V 4.3V 4.46V 4.5V 4.6V 4.9V 400mV 5.3V 5.4V 5.9V 500mV 6.55V 600mV 7.2V 700mV 800mV 900mV	- Surface Mount Through Hole	- 2-SMD Axial DFN123F Die DO-204AH (DO-35) DO-213AA (MINIMELF) DO-213AB (MELF, LL41) DO-214AA (SMB) DO-214AC (SMA) DO-35 DO-7 SOD-123FL SOT-23-3 TO-92

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Ergebnis

Hersteller-Teil #	Verfügbarkeit	Preis	Menge	Datenblatt	Serie	Verpackung	Produktstatus	Spannung - Anode - Kathode (Vak)(Max)	Reglerstrom (Max)	Leistung – Max	Anwendungen	Betriebstemperatur	Klasse	Qualifizierung	Spannung - Begrenzung (Max)	Montageart	Lieferant Gerätepaket
1N5286-1 DIODE CUR REG 100V 330UA 500MW Microchip Technology	6,579	-	RFQ	Datenblatt	-	Bulk	Active	100V	330µA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1V	Through Hole	DO-7
1N5288-1 DIODE CUR REG 100V 429UA 500MW Microchip Technology	3,382	-	RFQ	Datenblatt	-	Bulk	Active	100V	429µA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.05V	Through Hole	DO-7
1N5292-1 DIODE CUR REG 100V 682UA 500MW Microchip Technology	3,175	-	RFQ	Datenblatt	-	Bulk	Active	100V	682µA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.13V	Through Hole	DO-7
1N5293-1 DIODE CUR REG 100V 748UA 500MW Microchip Technology	3,729	-	RFQ	Datenblatt	-	Bulk	Active	100V	748µA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.15V	Through Hole	DO-7
1N5294-1 DIODE CUR REG 100V 825UA 500MW Microchip Technology	7,119	-	RFQ	Datenblatt	-	Bulk	Active	100V	825µA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.2V	Through Hole	DO-7
1N5296-1 DIODE CUR REG 100V 1.001MA 500MW Microchip Technology	6,409	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.001mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.29V	Through Hole	DO-7
1N5299-1 DIODE CUR REG 100V 1.32MA 500MW Microchip Technology	8,690	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.32mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.45V	Through Hole	DO-7
1N5301-1 DIODE CUR REG 100V 1.54MA 500MW Microchip Technology	6,221	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.54mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.55V	Through Hole	DO-7
1N5303-1 DIODE CUR REG 100V 1.76MA 500MW Microchip Technology	3,038	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.76mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1.65V	Through Hole	DO-7
1N5308-1 DIODE CUR REG 100V 2.97MA 500MW Microchip Technology	2,525	-	RFQ	Datenblatt	-	Bulk	Active	100V	2.97mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	2.15V	Through Hole	DO-7
1N5310-1 DIODE CUR REG 100V 3.63MA 500MW Microchip Technology	9,513	-	RFQ	Datenblatt	-	Bulk	Active	100V	3.63mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	2.35V	Through Hole	DO-7
1N5311-1 DIODE CUR REG 100V 3.96MA 500MW Microchip Technology	5,990	-	RFQ	Datenblatt	-	Bulk	Active	100V	3.96mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	2.5V	Through Hole	DO-7
1N5312-1 DIODE CUR REG 100V 4.29MA 500MW Microchip Technology	7,411	-	RFQ	Datenblatt	-	Bulk	Active	100V	4.29mA	500mW	-	-65°C ~ 175°C (TJ)	-	-	2.6V	Through Hole	DO-7
1N5287 DIODE CUR REG 100V 363UA 500MW Microchip Technology	9,088	-	RFQ	Datenblatt	-	Bulk	Active	100V	363µA	500mW	-	-65°C ~ 175°C (TJ)	-	-	1V	Through Hole	DO-7
1N5304 DIODE CUR REG 100V 1.98MA 475MW Microchip Technology	5,204	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.98mA	475mW	-	-55°C ~ 175°C	-	-	1.75V	Through Hole	DO-7
1N5303 DIODE CUR REG 100V 1.76MA 475MW Microchip Technology	4,759	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.76mA	475mW	-	-55°C ~ 175°C	-	-	1.65V	Through Hole	DO-7
1N5296 DIODE CUR REG 100V 1.001MA 475MW Microchip Technology	6,182	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.001mA	475mW	-	-55°C ~ 175°C	-	-	1.29V	Through Hole	DO-7
1N5298RL CURRENT REGULATOR Microchip Technology	6,635	-	RFQ	Datenblatt	*	Bulk	Active	-	-	-	-	-	-	-	-	-	-
1N5294 DIODE CUR REG 100V 825UA 475MW Microchip Technology	4,629	-	RFQ	Datenblatt	-	Bulk	Active	100V	825µA	475mW	-	-55°C ~ 175°C	-	-	1.2V	Through Hole	DO-7
1N5297 DIODE CUR REG 100V 1.1MA 475MW Microchip Technology	9,241	-	RFQ	Datenblatt	-	Bulk	Active	100V	1.1mA	475mW	-	-55°C ~ 175°C	-	-	1.35V	Through Hole	DO-7

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